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K7M161825M - 512Kx36 & 1Mx18 Flow-Through NtRAM-TM

K7M161825M_456190.PDF Datasheet


Part No.	K7M161825M K7M163625M
Description	512Kx36 & 1Mx18 Flow-Through NtRAM-TM
File Size	345.17K / 20 Page
Maker	Samsung semiconductor
Homepage	http://www.samsung.com/Products/Semiconductor/
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Full text search : 512Kx36 & 1Mx18 Flow-Through NtRAM-TM

Related Part Number

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K7M163635B-PC65 K7M163635B-PI65 K7M163635B-QI65 K7	512Kx36 & 1Mx18 Flow-Through NtRAM	Samsung semiconductor
K7R161884B K7R161884B-FC16 K7R161884B-FC20 K7R1618	512Kx36 & 1Mx18 QDR II b4 SRAM 512Kx36 512Kx36 & 1Mx18 QDR II b4 SRAM 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM	Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
IS61QDP2B451236A1 IS61QDP2B451236A2	512Kx36 and 1Mx18 configuration available	Integrated Silicon Solu...
K7Q161852A	512Kx36 & 1Mx18 QDRTM b2 SRAM	Samsung semiconductor
K7A161830B-QI16 K7A163630B-QC16 K7A161830B-PI25 K7	512Kx36 & 1Mx18 Synchronous SRAM	Samsung semiconductor
K7S1618T4C	512Kx36 & 1Mx18 QDR II b4 SRAM	Samsung semiconductor
K7I163682B06 K7I161882B	512Kx36 & 1Mx18 DDRII CIO b2 SRAM	Samsung semiconductor
K7K1618U2C K7K1636U2C	512Kx36 & 1Mx18 DDRII CIO b2 SRAM	Samsung semiconductor
K7Q161862B	(K7Q161862B / K7Q163662B) 512Kx36 & 1Mx18 QDRTM b2 SRAM	Samsung semiconductor
K7Q161852A	(K7Q161852A / K7Q163652A) 512Kx36 & 1Mx18 QDRTM b2 SRAM	Samsung semiconductor
IS61DDP2B41M18A IS61DDP2B451236A/A1/A2 IS61DDP2B41	1Mx18, 512Kx36 18Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM	Integrated Silicon Solution, Inc

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